| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5402102 | Journal of Luminescence | 2011 | 6 Pages |
Abstract
⺠Studying HEMTs structures with different silicon doping content. ⺠An increase of the electric field in the InAs layer with increasing Si content. ⺠The interband energy transitions in the HEMTs structures have been obtained from PR. ⺠Experimental and theoretical values of transitions energies were in good agreement.
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Authors
I. Dhifallah, M. Daoudi, A. Bardaoui, B. Eljani, A. Ouerghi, R. Chtourou,