| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5402231 | Journal of Luminescence | 2011 | 5 Pages |
Abstract
Polycrystalline CuIn1âxGaxTe2 bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te in a vacuum sealed quartz ampoule. The phase structure and composition of the bulk films were analysed by X-ray diffraction and energy-dispersive X-ray analysis, respectively. The bulk samples, of p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along a direction perpendicular to the (1Â 1Â 2) plane. Photoluminescence spectra were recorded at 7Â K and 700Â mW to characterize the defects and the structural quality. The main peak as a function of composition has been studied.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
O. Aissaoui, S. Mehdaoui, L. Bechiri, M. Benabdeslem, N. Benslim, A. Amara, A. Otmani, K. Djessas, X. Portier,