Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402320 | Journal of Luminescence | 2010 | 7 Pages |
Abstract
Electron spin resonance (ESR) studies were carried out to identify the defect centres responsible for the thermoluminescence (TL) and optically stimulated luminescence (OSL) processes in BeO phosphor. Two defect centres were identified in irradiated BeO phosphor by ESR measurements, which were carried out at room temperature and these were assigned to an Oâ ion and Al2+ centre. The Oâ ion (hole centre) correlates with the main 190 °C TL peak. The Al2+ centre (electron centre), which acts as a recombination centre, also correlates to the 190 °C TL peak. A third centre, observed during thermal annealing studies, is assigned to an Oâ ion and is related to the high temperature TL at 317 °C. This centre also appears to be responsible for the observed OSL process in BeO phosphor.
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Authors
S. Watanabe, T.K. Gundu Rao, P.S. Page, B.C. Bhatt,