Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402341 | Journal of Luminescence | 2010 | 4 Pages |
Abstract
The influence of the Mg concentration and lattice temperature on the carrier recombination dynamics in Zn1âxMgxO alloys has been studied by time-resolved photoluminescence for different emission and excitation energies. Carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of the theoretical model, yielding a characteristic localization energy of 60±15 meV for the sample with the highest Mg concentration of x=0.21.
Related Topics
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Physical and Theoretical Chemistry
Authors
A. Chernikov, S. Horst, M. Koch, K. Volz, S. Chatterjee, S.W. Koch, T.A. Wassner, B. Laumer, M. Eickhoff,