Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402400 | Journal of Luminescence | 2010 | 4 Pages |
Abstract
Intense visible luminescence is observed at room temperature from SiCGe films on 6H-SiC (0Â 0Â 0Â 1) substrate. The PL intensity increases rapidly under the UV laser excitation during the first 2Â h. This phenomenon may be explained by an effect similar to the Steabler-Wronski effect in hydrogenated amorphous Silicon. High density of defects such as double phase boundaries and stacking faults are observed by TEM characterization, which produce the quasidefects and accelerate the effect.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Li Lianbi, Chen Zhiming, Li Jia, Zhou Yangyang, Wang Jiannong,