| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5402407 | Journal of Luminescence | 2010 | 6 Pages |
Abstract
We present photoluminescence and electroluminescence of silicon nanocrystals deposited by plasma-enhanced chemical vapor deposition (PECVD) using nanocrystalline silicon/silicon dioxide (nc-Si/SiO2) superlattice approach. This approach allows us to tune the nanocrystal emission wavelength by varying the thickness of the Si layers. We fabricate light emitting devices (LEDs) with transparent indium tin oxide (ITO) contacts using these superlattice materials. The current-voltage characteristics of the LEDs are measured and compared to Frenkel-Poole and Fowler-Nordheim models for conduction. The EL properties of the superlattice material are studied, and tuning, similar to that of the PL spectra, is shown for the EL spectra. Finally, we observe the output power and calculate the quantum efficiency and power conversion efficiency for each of the devices.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
Tim Creazzo, Brandon Redding, Elton Marchena, Janusz Murakowski, Dennis W. Prather,