Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402644 | Journal of Luminescence | 2009 | 5 Pages |
Abstract
The remaining weak light emission is based on intrinsic and extrinsic defect luminescence. Thus our investigations are extended to ion implantation into silica layers, mainly on overstoichiometric injection or isoelectronic substitution of both the constituents silicon or oxygen, i.e. by ions of the group IV (C, Si, Ge, Sn, Pb) or the group VI (O, S, Se). Such implantations produce new luminescence bands, partially with electronic-vibronic transitions and related multimodal spectra. Special interest should be directed to low-dimension nanocluster formation in silica layers. Comparing cathodoluminescence (CL), photoluminescence (PL), and electroluminescence (EL), still too small luminescence quantum yields are obtained.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hans-Joachim Fitting,