Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402702 | Journal of Luminescence | 2009 | 4 Pages |
Abstract
Thin-film multilayers with dielectric and semiconductor nanolayers of 200-10 nm thicknesses have been deposited by thermal evaporation onto irradiation-resistive substrates using pure crystals as evaporated targets. Some multilayers were γ-irradiated in air at room temperature with dose of 83 kGy. X-ray diffraction and microscopy studies reveal that the multilayers consist of nanometer-sized crystals with cubic structure and defined size. Film structures were oriented along the (1 1 1) plane. Absorption spectra of non-irradiated LiF nanocrystals of 100 nm size and those of initial crystals give evidence of metal colloids presence. Photoluminescence spectra of γ-irradiated nanostructures with various LiF content show the enhancement of F3+-colour centres excitation in the region of metal colloids absorption and the increase is observed between emission intensities of F3+ and F2 centers with respect to initial crystals γ-coloured in identical conditions. Emission intensities of both centers under excitation in the M band correlate with LiF content. These effects, which are related to high-quality nanocrystals, but at the same time depend strongly on the defect content, especially as far as their 1-2 ps nonlinearities are concerned, could depend on nanocrystal purity and metal excess collection in their boundaries regions.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Olga Goncharova, Rosa Maria Montereali, Giuseppe Baldacchini,