Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402707 | Journal of Luminescence | 2009 | 4 Pages |
Abstract
It was demonstrated that the etching in HF-based aqueous solution containing AgNO3 and Na2S2O8 as oxidizing agents or by Au-assisted electroless etching in HF/H2O2 solution at 50 °C yields films composed of aligned Si nanowire (SiNW). SiNW of diameters â¼10 nm were formed. The morphology and the photoluminescence (PL) of the etched layer as a function of etching solution composition were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and photoluminescence. It was demonstrated that the morphology and the photoluminescence of the etched layers strongly depends on the type of etching solution. Finally, a discussion on the formation process of the silicon nanowires is presented.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
N. Megouda, R. Douani, T. Hadjersi, R. Boukherroub,