| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5402874 | Journal of Luminescence | 2010 | 7 Pages |
Abstract
A semiconductor luminescence formula is derived that includes phonon replica of arbitrary order based on a non-perturbative treatment of the electron-phonon interaction. The formula is used to analyze the extraordinarily strong sidebands observed with ZnO nanorods in recent experiments. Sidebands due to free and impurity-bound excitons are compared, and the generic differences between bulk and quantum-well emission are discussed.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
T. Feldtmann, M. Kira, S.W. Koch,