| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5402935 | Journal of Luminescence | 2009 | 4 Pages |
Abstract
SnO2 thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO2, under excitation at 280Â nm, shows only one broad emission at 395Â nm, which is related to oxygen vacancies. The PL of Er3+ ions was found to be enhanced after doping SnO2 with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
C. Bouzidi, H. Elhouichet, A. Moadhen, M. Oueslati,