Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5402992 | Journal of Luminescence | 2009 | 5 Pages |
Abstract
The morphology and the photoluminescence (PL) of Bi-assisted electroless etched p-type silicon in HF-Co(NO3)2-H2O solution as a function of etching time were studied. The scanning electron microscopy (SEM) observations have shown that the morphology of etched layers strongly depends on the etching time and it was observed that macropores filled with silicon crystallites are formed for etching time higher than 50Â min. Moreover, it was found that the PL spectra show a red emission with a peak centred at 640Â nm. The PL peak intensity reaches a maximum for etching time of 50Â min, and then it decreases with increasing etching time. The Fourier transform infrared (FTIR) measurements have shown a strong increase in intensities of the relevant Si-H and in the amount of oxide (absorption band at 1070Â cmâ1) for long etching time which was ascribed to an increase in the number of Si crystallites formed in the macropores.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
N. Megouda, T. Hadjersi, O. Elkechai, R. Douani, L. Guerbous,