| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5403035 | Journal of Luminescence | 2008 | 5 Pages |
Abstract
GaSe single crystals were N-implanted along c-axis with ion beams of 1014 and 1016Â ions/cm2 doses having energy values of 60 and 100Â keV. The photoluminescence (PL) spectra of undoped and N-implanted GaSe crystals were measured at different temperatures. The PL intensity was observed to decrease with increasing implantation dose while the FWHM of the exciton peaks increased. In heavily doped crystals, due to the interaction with the radiation induced disorders, the wave vector selection rules are satisfied and an indirect exciton PL band is observed 36Â meV below the direct exciton states.
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Authors
M. Karabulut, G. Bilir, G.M. Mamedov, A. Seyhan, R. Turan,