Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403044 | Journal of Luminescence | 2008 | 6 Pages |
Abstract
Compared to untreated GaAs surface, room temperature photoluminescence (PL) investigations of the porous layers reveal the presence of two PL bands: a PL peak at â¼871Â nm and a “visible” PL peak at â¼650-680Â nm. Both peak wavelengths and intensities varied from sample to sample depending on the treatment that the samples have undergone. The short PL wavelength at 650-680Â nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-sized crystallites were observed on the porous GaAs surface. An estimation of the mean size of the GaAs nano-crystals obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results.
Keywords
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Ben Khalifa, B. Gruzza, C. Robert-Goumet, G. Bremond, M. Hjiri, F. Saidi, L. Bideux, L. Bèji, H. Maaref,