Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403130 | Journal of Luminescence | 2009 | 5 Pages |
Abstract
A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110Â meV. The possible origins of the two main peaks at around 1.6 and 1.8Â eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials.
Related Topics
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Authors
Bi Zhou, Shuwan Pan, Songyan Chen, Cheng Li, Hongkai Lai, Jinzhong Yu, Xianfang Zhu,