Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403141 | Journal of Luminescence | 2007 | 6 Pages |
Abstract
An overview of recent experimental and theoretical results on stationary and time-dependent photoluminescence spectra in disordered semiconductor heterostructures is presented. In particular, temperature-dependent peak position and linewidth of the luminescence spectra, as well as the luminescence intensity are considered along with the time evolution of the luminescence intensity after pulsed excitation. Emphasis is given on the comparison between experimental and theoretical results aiming at a characterization of disorder in the underlying structures.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
O. Rubel, S.D. Baranovskii, K. Hantke, B. Kunert, W.W. Rühle, P. Thomas, K. Volz, W. Stolz,