Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403154 | Journal of Luminescence | 2007 | 4 Pages |
Abstract
A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq3 [(55âx) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency ηext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m2 at 15 V.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Huishan Yang, Yanwei Shi, Yi Zhao, Jingying Hou, Shiyong Liu,