Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403248 | Journal of Luminescence | 2008 | 6 Pages |
Abstract
Within the framework of the effective-mass approximation, the exciton states confined in wurtzite ZnO/MgZnO quantum dot (QD) are calculated using a variational procedure, including three-dimensional confinement of carriers in the QD and the strong built-in electric field effect due to the piezoelectricity and spontaneous polarizations. The exciton binding energy and the electron-hole recombination rate as functions of the height (or radius) of the QD are studied. Numerical results show that the strong built-in electric field leads to a remarkable electron-hole spatial separation, and this effect has a significant influence on the exciton states and optical properties of wurtzite ZnO/MgZnO QD.
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Authors
S.Y. Wei, L.L. Wei, C.X. Xia, X. Zhao, Y. Wang,