Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

The zincgallate (ZnGa2O4) phosphor thin film was grown using RF magnetron sputtering system at various process parameters. A ZnGa2O4 phosphor thin film was deposited on Si(1 0 0) substrate and annealed by a rapid thermal processor (RTP). The X-ray diffractometer (XRD) patterns indicate that the Mn-doped ZnGa2O4 phosphor thin film shows a (3 1 1) main peak and a spinel phase. A ZnGa2O4 phosphor thin film has better crystallization due to increased substrate, annealing temperature and deposition time. Also the ZnGa2O4:Mn phosphor thin film shows green emission (510 nm, 4T1→6A1), and the ZnGa2O4:Cr phosphor thin film shows red emission (705 nm, 4A2→4T2).