Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403365 | Journal of Luminescence | 2007 | 5 Pages |
Abstract
Strong photoluminescence (PL) covering the green-violet band was measured at room temperature in an as-deposited amorphous Si-in-SiNx film, which was prepared by plasma-enhanced chemical vapor deposition on cold (below 60 °C) Si(1 0 0) wafer. With an increase in photon energy of excitation, the PL shifts its peak position from 510 to 416 nm at yet-comparable intensities, thus allowing an energy-selected excitation in practical application. Also, a time-resolved analysis was performed for the emissions at various wavelengths, which showed a decay time shorter than 1.0 ns. These results indicate that the nanostructured Si-in-SiNx can be a promising candidate material for the fabrication of silicon-based optical interconnections and switches.
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Authors
L.B. Ma, R. Song, R. Huang, Y. Du, J.P. Ye, Y. Lin, Y.Q. Wang,