Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403555 | Journal of Luminescence | 2008 | 4 Pages |
Abstract
Er-doped Si-SiO2 and Al-Si-SiO2 films have been deposited by rf-sputtering being annealed afterwards. Annealing behavior of the Er3+: 4I13/2â4I15/2 emission of Er-doped Si-SiO2 yields a maximum intensity for annealing at 700-800 °C. 4I13/2â4I15/2 peak emission for Er-doped Al-Si-SiO2 at 1525 nm is shifted from that for Er-doped Si-SiO2 at 1530 nm and the bandwidth increases from 29 to 42 nm. 4I13/2â4I15/2 emission decays present a fast decaying component related to Er ions coupled to Si nanoparticles, defects, or other ions, and a slow decaying component related to isolated Er ions. Excitation wavelength dependence and excitation power dependence for the 4I13/2â4I15/2 emission correspond with energy transfer from Si nanoparticles. Populating of the 4I11/2 level in Er-doped Si-SiO2 involves branching and energy transfer upconversion involving two or more Er ions. Addition of Al reduces the populating of this level to an energy transfer upconversion involving two ions.
Related Topics
Physical Sciences and Engineering
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Physical and Theoretical Chemistry
Authors
C. Rozo, L.F. Fonseca, D. Jaque, J.GarcÃa Solé,