| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5403636 | Journal of Luminescence | 2007 | 5 Pages |
Abstract
Electron paramagnetic resonance (EPR) measurements are carried out on the 30Â keV H+ion-implanted, Si-doped GaAs(1Â 0Â 0) for various doses from 1014 to 1017Â cmâ2. The results are correlated with photoacoustic and photoluminescence measurements. All the measurements confirm the sign change of charge carrier at a dose of 1015Â cmâ2.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
R. Srinivasan, K. Ramachandran,