Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403787 | Journal of Luminescence | 2008 | 4 Pages |
Abstract
Cu-doped ZnO films with hexagonal wurtzite structure were deposited on silicon (1 1 1) substrates by radio frequency (RF) sputtering technique. An ultraviolet (UV) peak at â¼380 nm and a blue band centered at â¼430 nm were observed in the room temperature photoluminescent (PL) spectra. The UV emission peak was from the exciton transition. The blue emission band was assigned to the Zn interstitial (Zni) and Zn vacancy (VZn) level transition. A strong blue peak (â¼435 nm) was observed in the PL spectra when the αCu (the area ratio of Cu-chips to the Zn target) was 1.5% at 100 W, and ZnO films had c-axis preferred orientation and smaller lattice mismatch. The influence of αCu and the sputtering power on the blue band was investigated.
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Authors
Xingping Peng, Jinzhang Xu, Hang Zang, Boyu Wang, Zhiguang Wang,