Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5403897 | Journal of Luminescence | 2007 | 4 Pages |
Abstract
Nitrogen (N)-doped zinc oxide (ZnO:N) films were deposited on quartz glass substrates at 510 K by reactive radio-frequency magnetron sputtering of a ZnO target with sputtering gas of nitrogen. The as-grown ZnO:N shows insulating at room temperature, but behaves p-type conduction with resistivity of 456 Ω cm, carrier concentration of 1.2Ã1017 cmâ3 and Hall mobility of 0.1 cm2/V s in the dark after annealed at 860 K for 1 h under 10â4 Pa. Unfortunately, the p-type conduction is not stable in the dark and transforms into n-type gradually. After irradiated by sunlight for a few of minutes, the n-type ZnO:N reverts to metastable p-type one in the dark and remains p-type conductivity in the brightness. Formation and stability of the p-type ZnO:N are discussed in the present paper.
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Authors
B. Yao, L.X. Guan, G.Z. Xing, Z.Z. Zhang, B.H. Li, Z.P. Wei, X.H. Wang, C.X. Cong, Y.P. Xie, Y.M. Lu, D.Z. Shen,