Optical properties of erbium-doped porous silicon waveguides

Planar and buried channel porous silicon waveguides (WG) were prepared from p+-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl3-saturated solution. Erbium concentration of around 1020 at/cm3 was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.