Design of a silicon RCE Schottky photodetector working at 1.55 μm

Our numerical results prove that a quantum efficiency of 0.1% is obtained at resonant wavelength (1.55 μm) with a very thin absorbing metal layer (30 nm). Theoretical values of 100 GHz and 100 MHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency. The proposed photodetector can work at room temperature and its fabrication is completely compatible with standard silicon technology.