| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5404169 | Journal of Luminescence | 2006 | 5 Pages |
Abstract
We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using micro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states Pâ² between the S and P shells, and Dâ² between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs.
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Authors
F.Z. Wang, Z.H. Chen, J. Sun, L.H. Bai, S.H. Huang, H. Xiong, P. Jin, Z.G. Wang, S.C. Shen,