Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5404360 | Journal of Luminescence | 2006 | 5 Pages |
Abstract
Photoluminescence (PL) measurement has been made on P-doped p-GaS. The 2.35 and 2.12Â eV emission bands are observed in the PL spectrum of P-doped sample at 77Â K. The temperature dependence of full-width at half-maximum and the shape of the PL spectrum of the 2.12Â eV emission band are characterized by the recombination mechanism of the configurational coordinate model. It is found that the 2.12Â eV emission band is related to the complex center of vacancy and acceptor due to P atoms. It is found from the presence of the complex center that the P-doped samples include a high concentration of defects or defect complexes.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
S. Shigetomi, T. Ikari,