Estimation of the acceleration ability for electrons in SiO2 and the tunneling effect

Silicon dioxide (SiO2) plays an important role in layered optimization scheme and solid-state cathodoluminescence (SSCL). Initially, it was believed that the SiO2 layer would (i) generate extra interface states contributing to a number of primary electrons available for exciting the luminescent centers, and/or (ii) act as acceleration layer resulted in gaining high energy for those electrons that would tunnel into the luminescent layer to excite luminescent centers. Based on the brightness vs. voltage (B-V) measurements, we deem that the latter case, i.e. acceleration and tunneling, is the dominant mechanism. A detailed discussion in terms of electrons acceleration and tunneling as the main contributions to the enhancement of brightness is presented.