The epitaxial crystalline silicon-oxynitride layer on SiC(0Â 0Â 0Â 1): Formation of an ideal SiC-insulator interface

Article ID	Journal	Published Year	Pages	File Type
5420035	Progress in Surface Science	2011	33 Pages	PDF

Abstract

âº Recently discovered crystalline silicon-oxynitride film of 0.6Â nm-thick. âº Epitaxially grown film on 6Â H-SiC(0Â 0Â 0Â 1) of extremely robust against air. âº Ultrathin-oxide insulator/semiconductor interface with no dangling bond. âº Band-gap at the ultrathin oxide is fully open up to a value of quartz. âº Promising seed for nanoelectronic devices.

Keywords

CBM Conduction band minimum MOS LEED ARPES LDOS Aes Density of states DOS Chemical vapor deposition CVD AES, Auger electron spectroscopy MOSFET metal–insulator–semiconductor Low-energy electron diffraction Local density of states mis