Silicon surface nano-oxidation using scanning probe microscopy

This paper focuses on the nano-oxidation of a silicon surface using scanning probe microscopes in air ambient and in UHV. Special emphasis is put in air ambient on the preparation of the surfaces and on the oxidation mechanism. The characteristics of the patterned nanostructures are reviewed versus the parameters which govern the process (tip-surface voltage, tip speed, humidity) as well as the kinetics models of the oxidation process. The oxide patterns can act as robust masks for dry or wet etching. Fabrication of nanostructures is presented and allows to realize electronic nanodevices. In UHV, there is no direct nano-oxidation of the surface by the microscope tip. First the surface is hydrogenated, second a local hydrogen desorption is performed with the STM tip and finally the bare desorbed area is exposed to oxygen. The desorption process is analyzed versus tip-surface voltage and tunneling current. The oxidation of a desorbed area using molecular or atomic oxygen is actually difficult to achieve.