Article ID Journal Published Year Pages File Type
5421844 Surface Science 2015 6 Pages PDF
Abstract
Vacancies in dimer rows at 1 ML coverage for Ge grown on Si(001) align at higher temperatures in a direction perpendicular to the dimer rows.779
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Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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Understanding the early stages of growth of Ge on Si(001) from lattice based simulations
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