Article ID Journal Published Year Pages File Type
5421880 Surface Science 2015 5 Pages PDF
Abstract
We report on the measurement of the electronic properties of (112) AgInSe2 (AIS) by scanning tunneling microscopy (STM) and spectroscopy (STS). Current-voltage STS measurements show an average band gap of about 1.3 eV and n-type behavior. The IV data also shows band edge fluctuations and a region of states near the valence band edge that decay well into the gap. We compare STS determined band fluctuations in AIS to those previously measured in CuInSe2 (CIS) and find that the fluctuations are smaller in scale in AIS than CIS.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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