Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5422096 | Surface Science | 2014 | 4 Pages |
Abstract
Structural changes on cleaved (110) surfaces of InP, induced by tunneling carriers from the tip of a scanning tunneling microscope, were studied. Bond rupture takes place at intrinsic P-sites only at negative sample voltages (i.e., under hole-injection conditions), resulting in the formation of P-vacancies, while injected electrons induce no structural change. The rate of bond rupture, showing a prominent threshold sample voltage at â 2.2 V, is a quadratic function of the tunneling current. Nonlinear localization of two holes injected into surface bands is crucial as the primary step in the electronic bond rupture on semiconductor surfaces.
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Authors
J. Tsuruta, E. Inami, J. Kanasaki, K. Tanimura,