Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5422210 | Surface Science | 2014 | 7 Pages |
Abstract
Sub-monolayer Co deposition on clean Si(111)-(7 Ã 7) surfaces has been found to form nanoscale CoSi2 islands with a surrounding trench of one Si bilayer depth and mainly hexagonal shape. The trench surface structure is largely like that of the disordered '1 Ã 1' phase of the Si(111)-7 Ã 7 â '1 Ã 1' phase transition and comprises mostly disordered Si adatoms with small ordered patches of (11 Ã 11), (9 Ã 9), c(5 Ã â5), c(4 Ã 4) and (2 Ã 2) structures along with some Co-ring clusters. This disordered '1 Ã 1' structure within the trench has formed at 600 °C, the growth temperature of CoSi2 in reactive deposition epitaxy, much below the order-disorder phase transition temperature on Si(111)-(7 Ã 7). The structure around the trench remains (7 Ã 7). Electronically the trench is semiconducting. The surrounding 7 Ã 7 structure being metallic, the island-trench structure forms a lateral metal-semiconductor-metal structure.
Related Topics
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Authors
J.C. Mahato, Debolina Das, R. Batabyal, Anupam Roy, B.N. Dev,