Article ID Journal Published Year Pages File Type
5422362 Surface Science 2013 6 Pages PDF
Abstract
Homoepitaxial growth of AlN on (11-20) a-plane and (1-100) m-plane under varying deposition temperatures and aluminum to nitrogen flux ratios was carried out using molecular dynamics (MD) simulations with a Tersoff based interatomic potential. The results indicate that much thicker overgrown films are obtained on m-plane as compared to the a-plane, for the same temperature, N:Al flux, and number of precursor atoms. Crystallinity of the depositions improves as the temperature is increased above 1000 K, accompanied with a better stoichiometry due to increased adatom mobility. Improvement in crystal quality with a N:Al ratio greater than 1 is seen because N atoms desorb more easily than Al atoms. Increasing the N:Al ratio too high limits Al adatom mobility as well as causes site blocking for Al atoms and degrades the deposition quality. The optimum value for N:Al flux ratio was found to be between 1.2 and 1.8 for the deposition temperatures tested based on crystallinity and stoichiometry.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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