Article ID Journal Published Year Pages File Type
5422400 Surface Science 2014 4 Pages PDF
Abstract
In this work complex mathematical model for calculation of dependencies on growth conditions of parameters of self-organized quantum dots (QDs) of Ge on Si grown by the method of molecular beam epitaxy (MBE) is described. Calculations on pyramidal and elongated islands formation energies in Ge/Si(001) system with respect to surface energy, elastic strains relaxation and attraction of atoms to substrate decreasing are done. On the basis of well-known model based on generalization of classical nucleation theory it is shown that wedge-like clusters form later than pyramidal but begin to dominate in the QDs massive on the later stages of growth. Conclusions from the described theory correspond to the experimental observations.
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
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