Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5422489 | Surface Science | 2013 | 6 Pages |
Abstract
⺠We investigate the growth processes of InP epitaxial layers on InP(111)A. ⺠Ab-initio-based approach which incorporates temperature and pressure is employed. ⺠Wurtzite structure can be formed for high temperature and low P pressure. ⺠Rotational twins can be formed for low temperature and high P pressure.
Related Topics
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Physical and Theoretical Chemistry
Authors
T. Yamashita, T. Akiyama, K. Nakamura, T. Ito,