| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422494 | Surface Science | 2013 | 5 Pages |
Abstract
⺠The SBH of Ag, Ag and In on Ga-terminated r3 Ã r3 R30° and 6.3 Ã 6.3 surfaces have been studied in detail. ⺠Substantial increases in n-type SBH and decreases in p-type SBH, by as much as 0.2 eV, were generally deducted from various techniques. ⺠The present work demonstrated a wide range of SBHs on Si accessible with the PI approach. ⺠The present work showed that the chemical stability of the metal-ATS interface was important for the effectiveness of this approach.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Wei Long, Yang Li, Raymond T. Tung,