| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422507 | Surface Science | 2013 | 6 Pages |
Abstract
⺠High resolution XPS was used to study ZnO nanocrystals distributed on SiO2/Si. ⺠The optimal cleaning temperature for ZnO nanocrystals in UHV is found to be 650 °C. ⺠A large downward band bending of 1.4 eV is observed after annealing at 750 °C. ⺠Band structure changes related to chemical changes and point defects are discussed. ⺠The concentrations of both oxygen and zinc vacancies affect the band bending.
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Authors
L.K.E. Ericsson, H.M. Zhang, K.O. Magnusson,