| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422527 | Surface Science | 2013 | 9 Pages |
Abstract
⺠Analysis of the electronic structure of InSb(001)âc(8 Ã 2) using stateâofâthe-art ARPES and STM. ⺠Semiconducting c(8 Ã 2), with no surface states at the gap, Fermi level pinned at the top of the VBM. ⺠Several surface states characterized, identified atomic origin of the most prominent one, close to the VBM. ⺠Temperature induced shift quantitatively explained from change of the chemical potential and SPV.
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Authors
L. Walczak, G. Goryl, M.A. Valbuena, I. Vobornik, A. Tejeda, A. Taleb-Ibrahimi, J.J. Kolodziej, P. Segovia, E.G. Michel,