Article ID Journal Published Year Pages File Type
5422550 Surface Science 2013 5 Pages PDF
Abstract
► Reduced-pressure chemical vapour deposition of Si on Si(111)-oriented substrates. ► The higher the growth temperature, the straighter and better ordered terraces are. ► Triangular islands and step edges at lower temperatures. ► Correlation of growth temperature with diffusion length. ► Transition to 3 dimensional growth below 850 °C.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Modification of the surface morphology of silicon(111) with growth temperature
Authors
, ,