| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422581 | Surface Science | 2012 | 21 Pages |
Abstract
⺠Preferential growth of Ridge and Flat cobalt disilicide nanostructures along <110> directions. ⺠TEM shows islands grow into the silicon substrate. ⺠Short rectangular ridge islands become long nanowires at high growth temperatures. ⺠Elongated rectangular flat islands become more square-like at high growth temperatures.⺠Shape transition observed is attributed to presence of kinetic-barriers.
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Authors
Bin Leong Ong, Weijie Ong, Yong Lim Foo, Jisheng Pan, Eng Soon Tok,