| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422584 | Surface Science | 2012 | 8 Pages |
Abstract
⺠The chemical composition of the oxide film on high-index silicon surfaces ⺠The origin of the O 1s core level shift due to the local strain ⺠The oxidation reaction rate on high-index silicon surfaces
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Shin-ya Ohno, Kei Inoue, Masahiro Morimoto, Sadanori Arae, Hiroaki Toyoshima, Akitaka Yoshigoe, Yuden Teraoka, Shoichi Ogata, Tetsuji Yasuda, Masatoshi Tanaka,