Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

Article ID	Journal	Published Year	Pages	File Type
5422590	Surface Science	2012	11 Pages	PDF

Abstract

âº The InN/GaN (0001) interface relaxes via Î±-core 90Â° partial misfit dislocations. âº Unreconstructed dislocation cores contain high-energy N dangling bonds. âº The application of existing reconstruction models creates unstable N-N dimers. âº A novel “triple-period” (TP) reconstruction of the dislocation core is introduced. âº It eliminates N dangling bonds via N vacancies instead of N-N dimers.

Keywords

SSM Reconstruction Misfit dislocation Misfit dislocations Ab initio calculations Scanning tunneling microscopy GSM

Related Topics

Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry

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Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

Authors

Lixin Zhang, W.E. McMahon, Y. Liu, Y. Cai, M.H. Xie, N. Wang, S.B. Zhang,