| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422599 | Surface Science | 2012 | 5 Pages |
Abstract
⺠β-SiC nanocrystals are grown by high-T annealing of SiO2/Si samples under CO. ⺠The growth is studied in-situ by XPS and subsequently by electronic microscopy. ⺠The results reveal the formation of oxicarbide which was not previously observed. ⺠Based on this, we propose a new reaction equation between CO and SiO2/Si.
Related Topics
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Physical and Theoretical Chemistry
Authors
M. D'angelo, G. Deokar, S. Steydli, A. Pongrácz, B. Pécz, M.G. Silly, F. Sirotti, C. Deville Cavellin,