Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5422607 | Surface Science | 2012 | 5 Pages |
Abstract
⺠Noble and enhanced Ge-indiffusion found on Si(5 5 12)-2 Ã 1. ⺠Tensile stress induced by chain structures provides enhanced Ge-indiffusion. ⺠Displacive and 1D adsorption of Si atoms provides the seed of faceting. ⺠Replacing hierarchy by Ge: Up-atom â Subsurface-atom â Down-atom.
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Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Hidong Kim, Otgonbayar Dugerjav, Ganbat Duvjir, Huiting Li, Jae M. Seo,