Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2Â ÃÂ 1: Tensile stress induced by substrate chain structures

Article ID	Journal	Published Year	Pages	File Type
5422607	Surface Science	2012	5 Pages	PDF

Abstract

âº Noble and enhanced Ge-indiffusion found on Si(5 5 12)-2Â ÃÂ 1. âº Tensile stress induced by chain structures provides enhanced Ge-indiffusion. âº Displacive and 1D adsorption of Si atoms provides the seed of faceting. âº Replacing hierarchy by Ge: Up-atomÂ âÂ Subsurface-atomÂ âÂ Down-atom.

Keywords

Semiconductor–semiconductor interfaces Surface structure, morphology, roughness, and topography High index single crystal surfaces silicon Scanning tunnelling microscopy Diffusion and migration germanium