Article ID Journal Published Year Pages File Type
5422642 Surface Science 2013 4 Pages PDF
Abstract
► A difference in surface stress between Si(111) 7×7 and Bi-Si(111) √3×√3-β. ► Surface stress evolution during Ge growth on Bi-Si(111). ► Combined surface-curvature and RHEED instrumentations in an identical system. ► Bi-Si(111) √3×√3-β releases 1.4 eV/(1×1 unit cell) from tensile Si(111) 7×7. ► Ge on Bi-Si(111) shows a oscillatory stress relaxation in layer-by-layer growth.
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Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Direct measurement of surface stress during Bi-mediated Ge growth on Si
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