Article ID Journal Published Year Pages File Type
5422653 Surface Science 2013 9 Pages PDF
Abstract
► A Tersoff-based empirical potential for the SiGeO system is investigated. ► The potential model is validated against using multiple properties and systems. ► One regression parameter, the GeO bond strength, is used to optimize the potential. ► Ge adsorption and diffusion on amorphous SiO2 is shown to be captured well.
Keywords
Related Topics
Physical Sciences and Engineering Chemistry Physical and Theoretical Chemistry
Preview
Atomistic analysis of Ge on amorphous SiO2 using an empirical interatomic potential
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