| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5422741 | Surface Science | 2011 | 6 Pages |
Abstract
âºCu diffusion in ultrathin Co films on Cu(001) is controlled. âºExperimental parameter is the sample temperature during and after film growth. âºRoom-temperature growth cannot prevent Cu diffusion on the timescale of hours. âºSharp interfaces with no diffusion obtained by low-temperature growth plus annealing. âºCu diffusion at higher temperatures changes surface composition and topography.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
T. Allmers, M. Donath,